吉林省长春市榆树市HBM工艺材料论文用2026年专业推荐

发布日期：2026/5/25 5:47:25

ZS-800 Series Post CMP Cleaning Solutions
半导体铜制程、CMP后清洗剂，替代ATMI ESC-784英特格
深圳市芯泰科光电有限公司
产品热线许经理 :15220133370 扣扣：35捌9123零
深圳市芯泰科光电有限公司，创立于2014年，是一家服务于微电子领域的产品贸易及技术服务提供商。我们已经成为国内微电子制程领域和相关大学研究所信赖的合作伙伴；公司秉持以忠诚态度对待新旧客户，以客户满意为导向，提供优质率的专业服务，提供产品行销及技术支援解决方案。我们目标是成为一家新材料应用技术推广服务的专业供应商。

Critical to PCMP Cleaning Solution Design
 1. Particle removal: abrasive materials slurry
 2. Organic residue removal: polymers, BTA, ligs….
 3. Metal complex inorganic residue removal
 4. Safe to other film materials: SiOx, SiN, dielectric…..
 5. Cu corrosion inhibition
 6. Cu surface conditioning

Cu-BTA complex solid is s between pH  3~10. Cleaning solutions with
pH higher than 10 or lower than 3 are capable to remove Cu-BTA complex!

CEMI ZS-800 Series Design Concepts
1. Buffered high pH solution
 2. Reducing agent to control solution electrochemical property
 3. Metal chelators to remove metal oxides/ions
 4. Surfactants to remove organic inorganic residues
 5. Corrosion inhibitors to minimize Cu corrosion
 6. Concentrated aqueous solution for cost effectiveness

TMAH/H2O                                 pH adjuster, buffered aqueous, Cu-BTA complex removal
 (KOH)
 Reducing agent                         Electro-potential control, buffer, Cu reducing
 Metal chelator                           Metal oxide/ion removal, Cu-BTA complex removal
 Surfactant                                 Organic inorganic residue removal, surface wetting
 Corrosion                                   Cu  corrosion control surface conditioning
Inhibitor

CEMI ZS-800 Series Solution Comparison

1. Dilution ratio can be tailor to customer process need.
 2. CIP formulation with same concept can be tailor to customer requirements.
3. Actual TMAH% in Finished Good can be determined through titration.
 4. ZS-800 equivalent POR reported actual TMAH% not input value.
 5. ZS-802 formulation adopted an optimal buffer system to achieve lower Cu etch rate.
 6. Local manufacturing in Taiwan.

1. Lowest good TMAH input amount of ZS-802 is 3.3%.
 2. TAMH input amount is determined to be 3.8% for ZS-802 formulation design.

1. Excellent buffer property upon dilution is needed to ensure good performance.
 2. ZS-800 series cleaning solution can be used at >100X dilution.

深圳市芯泰科光电有限公司:光电材料、微电子材料、电子元器件、半导体产品、LED...
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